Perkin Elmer 2400 Sputtering System

SUPERIOR SPUTTERING PERFORMANCE

Integrated Systems for Maximum Control

In all 2400 Series systems, optimum sputtering performance and maximum control of film characteristics is provided by a sophisticated interrelationship between cathode designs, chamber configurations and control of system electronics.

An Efficient Cathode Design

The 8-inch circular cathode supplied with 2400 Series systems is effective in a broad range of sputtering applications and can be used in RF or DC configurations, depending on the particular model.

Series 2400 systems accept up to three cathodes plus a heater. The cathodes are fabricated of OFHC copper for efficient cooling. Water lines used for cooling are monitored with fail-safe switches that automatically shut off RF or DC power in the event of loss of water pressure.

The DC planar magnetron cathode assembly is constructed with integral magnet pole pieces that directly contact the magnet array. The cathode accommodates8-inch-diameter sputtering targets, which are metallurgically bonded to the front of the backing plate. This assembly creates a very strong transverse magnetic field at the target face between the magnetic pole pieces, increasing both the electron density in this region and the number of ionizing collisions occurring with the argon atoms. This significantly increases the deposition rate. In addition, increased ion population contributes to a stable DC plasma at very high power densities.

The RF Planar Magnetron Cathode Assembly

The RF planar magnetron cathode assembly consists of a conventional 8-inch-diameter RF cathode with a copper backing plate that accepts8-inch-diameter sputtering targets, a ceramic insulator and a top plate. Mounted behind the ceramic insulator is a special adapter ring that allows this cathode to accept the magnet array.

This configuration creates a circular, symmetrical deposition pattern, which is a ring-shaped annulus on the target face where the high deposition rate occurs. Distribution under the planar magnetron cathode is symmetrical but nonuniform along the radius. It is not recommended for use in static deposition mode, and its use in the 2400-8L system requires that uniformity over the entire cathode area is not required. In 2400-8SA systems, the substrate moves under the deposition source and the use of a special shaping aperture results in high levels of uniformity.

Uniform Deposition Is Assured

The2400-8SA, -8L and -8J use uniformity-shaping apertures to compensate for the geometry of the cathode sputtering pattern. In the2400-8SA, uniformity is further improved by the use of a rotating substrate table. The2400-8L and -8J utilize a double-disk space shield to eliminate edge sputtering from the cathode plate and provide exceptional plasma confinement. (Special shields are available for sputtering targets less than8 inches in diameter.)

Select the Operating Mode You Need

In all2400 systems, the mode selector switch permits you to use the following modes:

Sputter Deposit: In this mode, RF power is applied only to the target. The substrate table is grounded.
Bias Sputter: RF power is applied to the target, but a small amount of RF power is also applied to the substrate table. Consequently, the substrates are bombarded by ions, but to a much smaller degree than the target. In many cases, this results in film characteristics different from RF sputtering with grounded substrates.
Sputter Etch: RF power is applied only to the substrate table and material is removed (etched) from the substrate by ion bombardment. Maximum power in this mode is1 kW.